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iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 1/10 FEATURES o o o o o o o o o o o o o o o Laser diode driver of up to 250 mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output Integrated RC oscillator up to 4 MHz Integrated 16:1 divider for pulse generation in the kHz range Stable 1:1 pulse duty ratio Simple adjustment of the laser power via external resistor Soft-start at power-on Complementary pulse repetition frequency output for ECL level Shutdown in case of overtemperature Single 5 V power supply Very few external components iC-VJ for laser diodes with 50 to 500 A monitor current iC-VJZ for laser diodes with 0.15 to 1.5 mA monitor current APPLICATIONS o Transmitter for laser light barriers from 1 to 200 kHz
PACKAGES
SO16N
BLOCK DIAGRAM
Sync DC-Monitor 5V
R3 10k 13 MO MI 4
C3 100nF 12 VCC C4 100 F
OUTPUT DIVIDER 14 Q PRF NQ 15 NPRF 4 2 7 MONITOR 16:1 NQ
DRIVER 1
AMD
1
MD LD
1:1 iC-VJ 1:3 iC-VJZ
OSCILLATOR REFERENCE POWER ON TH-SHUTDOWN KLD 2
3
5
6
GND
3
R 5 R1 800
RC 6
ISET 11 RSET 10k
iC-VJ/VJZ
CI 9
AGND 7
C2 100nF..470nF usable LD models
C1 100pF
Copyright (c) 2006 iC-Haus
http://www.ichaus.com
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 2/10 DESCRIPTION The devices iC-VJ and iC-VJZ are control ICs for laser diodes. Control to the average of the laser current and integrated protective functions ensure save operation of the sensitive semiconductor laser. All required functions for the pulse operation of a CW laser are integrated: a power driver and monitor amplifier for direct connection of the laser diode, an oscillator for pulse repetition frequency generation, a start-up and temperature protection as well as monitor and pulse repetition frequency outputs for synchronous control of a receiver circuit. The laser power control is adapted to the laser diode used with an external resistor at ISET. The capacitor at CI determines the control time constants. The oscillator operates with an external RC circuit in the range from about 10 kHz to 4 kMHz. The generated pulse duty factor is a stable 1:1; the oscillator frequency is reduced to 1/16th by the integrated divider. An image of the laser diode current is output via MI. Output MI when connected with a low pass filter forms a voltage proportional to the average laser current. This voltage is output to MO via the integrated voltage follower and is thus available for any applications. The Outputs PRF and NPRF supply the pulse repetition frequency complementarily to analogue levels (VCC / 2 0.75 Vpk ) to be able to activate high-speed ECL logic of a receiver circuit. The IC contains protective diodes against ESD destruction, a thermal shutdown, plus a start-up circuit for the laser diode driver to protect the laser diode when the supply voltage is switched on.
PACKAGES SO16N to JEDEC Standard PIN CONFIGURATION SO16N (top view)
1 16
PIN FUNCTIONS No. Name Function
n.c.
AMD
2 15
KLD
3
NPRF
14
GND
4
PRF
13
MI
5
MO
12
R
6
VCC
11
RC
7
ISET
10
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
AMD KLD GND MI R RC AGND n.c. CI n.c. ISET
Anode Monitor Diode Cathode Laser Diode Ground Monitor Current Output Oscillator Resistor Oscillator Capacitor Analogue Ground Averaging Capacitor
iC-VJ# Code... ... ...yyww
AGND
8 9
n.c. CI
n.c.
Set-up Resistor for the Laser Diode Power VCC 5 V Supply Voltage MO Monitor Voltage Output PRF Pulse Repetition Frequency Output NPRF Inverted PRF n.c.
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 3/10 ABSOLUTE MAXIMUM RATINGS
Beyond these values damage may occur; device operation is not guaranteed. Item No. Symbol Parameter Supply Voltage Current in AGND Current in CI Voltage at KLD Current in KLD Current in AMD Current in PRF Current in NPRF Current in R, RC Current at ISET Current in MI Current in MO Junction Temperature Storage Temperature PRF = lo PRF = hi iC-VJ iC-VJZ Conditions Fig. Min. 0 -4 -4 0 -4 -4 -6 -10 -10 -2 -2 -2 -2 -40 -40 Max. 6 4 4 6 600 4 6 2 2 2 2 2 2 150 150 V mA mA V mA mA mA mA mA mA mA mA mA C C Unit
G001 VCC G002 I(AGND) G003 I(CI) G004 V(KLD) G005 I(KLD) G006 I(AMD) G007 I(PRF) G008 I(NPRF) G009 I(R,RC) G010 I(ISET) G011 I(MI) G012 I(MO) G013 Tj G014 Ts
THERMAL DATA
Operating Conditions: VCC = 5 V 10% Item No. T01 Symbol Ta Parameter Operating Ambient Temperature Range (extended temperature range on request) Thermal Resistance Chip to Ambient soldered on PCB, without special cooling Conditions Fig. Min. -25 Typ. Max. 90 C Unit
T02
Rthja
140
K/W
All voltages are referenced to ground unless otherwise stated. All currents into the device pins are positive; all currents out of the device pins are negative.
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 4/10 ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC = 5 V 10%, RSET = 5...50 k, iC-VJ: I(AMD) = 50...500 A, iC-VJZ: I(AMD) = 0.15...1.5 mA; Tj = -25...125 C, unless otherwise stated. Item No. 001 002 Symbol Parameter Conditions Tj C Fig. Min. 4.5 Typ. Max. 5.5 50 V mA Unit
Total Device VCC Iav(VCC) Permissible Supply Voltage Range at VCC Supply Current in VCC (average Iav(KLD) = 100 mA, value) fosc = 3.2 MHz 20%, I(PRF, NPRF) = 0 Pulse Edge Delay I(KLD) to V(PRF) Pulse Edge Delay I(KLD) to V(NPRF) Saturation Voltage at KLD Leakage Current in KLD Current in KLD Voltage at AMD Current Rise Time in KLD Current Fall Time in KLD Average Value for Current Ratio I(AMD) / I(ISET) Current Ratio I(AMD) / I(CI) PRF(hi lo), I(50%):V(50%) NPRF(hi lo), I(50%):V(50%) -70 -70
003 004
tp(KLDPRF) tp(KLDNPRF) Vs(KLD) I0(KLD) I(KLD) V(AMD) tr tf CR1()av
70 70
ns ns
Driver KLD, AMD 101 102 103 104 105 106 107 PRF = hi, I(KLD) = 200 mA PRF = lo, V(KLD) = VCC I(AMD) = 0 iC-VJ: I(AMD) = 500 A iC-VJZ: I(AMD) = 1.5 mA Imax(KLD) = 20...250 mA, I(KLD): 10% 90% Imax(KLD) = 20...250 mA, I(KLD): 90% 10% I(CI) = 0, closed control loop; iC-VJ iC-VJZ V(CI) = 1...3.5 V, ISET open; iC-VJ iC-VJZ 0.8 2.4 0.9 2.7 47.5 625 0.95 VCC, fosc = const. CL() = 50 pF, V(): 10% 90% CL() = 50 pF, V(): 90% 10% R1 = 800 , C1 = 100 pF R x C = constant 2.64 0.85 2.9 1 16 1.20 27 502 503 CR() RSET Current Ratio I(CI) / I(ISET) Permissible Resistor at ISET to AGND (Control Set-up Range) Turn-on Threshold VCC Hysteresis Thermal Shutdown Threshold Thermal Shutdown Hysteresis Saturation Voltage lo at CI in case of undervoltage VCC = 0...VCCon - VCChys, I(CI) = 300 A V(CI) = 1...3.5 V, I(AMD) = 0 0.9 2.7 1.22 1 1.1 50 k 1.27 V V 1 3 1 3 50 750 1 250 0.5 1.5 150 150 1.5 10 V A mA V ns ns
1.2 3.6 1.1 3.3 52.5 875 1.05 20 150 150 3.19 1.15 ns ns ns MHz %VCC mV
108
CR2()
Output PRF, NPRF 201 202 203 204 205 206 301 302 401 Vav() Vpk() tpp() j() tr() tf() fosc fosc/f0 Div Average Value of Output Voltage I(PRF, NPRF) = 0...-4 mA Amplitude Pulse/Pause Ratio Jitter Rise Time Fall Time Oscillator Frequency Frequency Drift Division Factor fosc / PRF Reference Voltage I(PRF, NPRF) = 0...-4 mA
Oscillator R, RC
Divider Reference ISET 501 V(ISET)
Power-on and Thermal Shutdown 601 602 603 604 605 VCCon VCChys Toff Thys Vs(CI)lo 3.0 300 125 10 1.5 4.1 450 150 V mV C C V
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 5/10 ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC = 5 V 10%, RSET = 5...50 k, iC-VJ: I(AMD) = 50...500 A, iC-VJZ: I(AMD) = 0.15...1.5 mA; Tj = -25...125 C, unless otherwise stated. Item No. 606 Symbol Vs(CI)hi Parameter Saturation Voltage hi at CI Conditions Vs(CI)hi = VCC - V(CI), RSET = 25 k; iC-VJ: I(AMD) = 30 A iC-VJZ: I(AMD) = 90 A R(MI) = 10 k, C(MI) = 100 nF, Iav(KLD) = 10...50 mA R(MI) = 10 k, C(MI) = 100 nF, Iav(KLD) = 50...125 mA PRF = lo, V(MI) = 0 V V(MI) = 0.2...3.5 V, R(MO) = 5 k -30 Tj C Fig. Min. 0.3 Typ. Max. V Unit
Monitor Outputs MI, MO 701 702 703 704 Iav(MI) Iav(MI) I0(MI) Vos(MOMI) Current in MI (Average Value) Current in MI (Average Value) Leakage Current in MI Offset Voltage V(MO - MI) 0.15 0.12 0.19 0.19 0.23 0.26 3 30 % I(KLD) % I(KLD) A mV
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 6/10 DESCRIPTION OF FUNCTIONS Laser Power Adjustment The iC-VJ and iC-VJZ devices can be adapted to CW laser diodes from 2 to 40 mW. Models can be used in which the cathode of the monitor diode is connected to the anode or the cathode of the laser diode. The driver output, pin KLD, permits laser diode currents of up to 250 mA. In the event of a thermal overload due to excessive high power dissipation, the driver is turned off. The pin ISET is used for the adjustment to the sensitivity of the monitor diode and to set the desired optical laser power. The setpoint for the average control of the monitor diode current is preset at this pin, by connecting it either to a resistor or a current source. When connected to a current source, by means of an operational amplifier with current output (OTA) for example, the laser power can also be modulated. In order to limit the current at pin ISET when turning on the supply for the OTA, however, the OTA output should be connected to the base point of RSET. The maximum current possible at ISET must be taken into consideration when dimensioning the capacitor C2.
Sync DC-Monitor
Example iC-VJ Laser diode with 5 mW maximum optical output, monitor diode with 0.13 mA/mW, average power 1 mW (peak power 2 mW; pulse duty ratio Twhi / T is 50%). RSET is calculated as: CR1 V (ISET ) 1 1.22 V = 9.4 k I(AMD) 0.13 mA
RSET =
with the Electrical Characteristics No. 501 for V(ISET) and with No. 107 for current ratio CR1. Example iC-VJZ Laser diode with 5 mW maximum optical output, monitor diode with 0.75 mA at 3 mW, average power 1 mW (peak 2 mW; pulse duty ratio Twhi / T is 50%). For the average monitor current of 0.25 mA the resistor RSET is calculated as: CR1 V (ISET ) 3 1.22 V = 14.6 k I(AMD) 0.25 mA
RSET =
with the Electrical Characteristics No. 501 for V(ISET) and with No. 107 (iC-VJZ) for current ratio CR1.
5V
R3 10k 13 MO MI 4
C3 100nF 12 VCC C4 100 F
OUTPUT 14 Q PRF NQ 15 NQ NPRF 4 2 7 MONITOR DIVIDER 16:1
DRIVER 1
LD
AMD
MD
1:1 iC-VJ 1:3 iC-VJZ REFERENCE POWER ON TH-SHUTDOWN KLD
OSCILLATOR
3
5
6
GND
3
R 5 R1 800
RC 6
ISET 11 RSET
iC-VJ/VJZ
CI 9
AGND 7
C2 470nF
C1 100pF
Figure 1: Operation of a laser diode according to the example
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 7/10 Oscillator The internal oscillator operates in the range approx. 10 kHz to 4 MHz. This enables laser pulse repetition frequencies from 1 to 200 kHz. Fig. 2 shows the pulse repetition frequency as a function of the oscillator circuit. Example R1 = 620 , C1 = 82 pF: f 200 kHz
f [kHz]
200
PRF [1V/div]
LASER Output [2mW/div]
I(KDL) [50mA/div]
KDL [1V/div] Timebase = 1:s/div
Figure 3: Settled control with 200 kHz pulse repetition frequency Turn-on and Turn-off Behavior Capacitor C2 also determines the starting time from switching on the supply voltage VCC to steady-state laser pulse operation. The values of C2 which are necessary higher for low pulse repetition frequencies increase this starting time to several milliseconds (Fig. 4). The following applies for estimating the starting time:
100
C1= 82pF C1= 220pF C1= 1nF
1
2
3
4
5
6
7
8
R1 [k]
Figure 2: Pulse repetition frequency Ton Averaging Control The control of the average optical laser power requires the external capacitor C2 at pin CI. This capacitor is used for averaging and must be adjusted to the selected pulse repetition frequency and the charging current preset with RSET. The ratios are linear in both cases, i.e. C2 must be increased in size proportionally as the pulse repetition frequency slows or resistance RSET decreases. 440 I(ISET ) 440 = f V (ISET ) f RSET
2.5 V C2 2.5 V C2 RSET = I(ISET ) 1.22 V
Example C2 = 4.7 F, RSET = 10 k: Ton 96 ms
VCC [2V/div] PRF [2V/div]
LASER Output [2mW/div]
C2
C [1V/div]
Timebase = 20 ms/div
Example Frequency 10 kHz, RSET = 10 k: C2 4.7 F Otherwise the charging of C2 during the pulse pauses (with I(ISET) = 1.22 V / RSET) will result in excessive mean value potential at pin CI and the laser diode may be destroyed with the next pulse. C2 is correctly dimensioned when the current through the laser diode and the optical output signal do not show any overshooting on the rising edge. In steady-state condition, signals will then appear at the IC pins as shown in Fig. 3. In this case the laser pulse exhibits a minimal overshoot on the rising edge, but this can be tolerated. The increase in the current in KLD and the laser pulse follow directly after the signal at the divider output PRF. The outputs PRF and NPRF are used for receiver synchronisation.
Figure 4: Turn-on behavior f = 10 kHz, RSET = 10 k, C2 = 4.7 F
LASER Output
LASER Output [1mW/div]
C [200mV/div]
Figure 5: Setteling of the averaging control For high pulse repetition frequencies (200 kHz) and low C2 values (220 nF) and for RSET = 10 k the averaging control achieves its operating point after 3.5 ms. Fig. 5 shows the turn-on, Fig. 6 the turn-off behavior, here in case of undervoltage.
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 8/10
VCC [2V/div] LASER Output [1mW/div]
up transients (Fig. 7). This capacitor should be placed close to the laser diode and not at the start of the LD supply line. An approx. 12 series resistor at pin KLD reduces the iC power consumption and damps possible resonances of the load circuit caused by the inductive LD supply line. This resistor is useful for many applications, also for those which do not operate via cable. When the LD supply line is laid out on the PCB, the forward path VCC should be arranged in parallel with, i.e. be close to the return path to KLD, even when the line is only a few centimeters in length.
5V
C [50mV/div]
Figure 6: Turn-off behavior Operation of a laser diode via cable It is recommended to connect a capacitor from 1 nF up to 10 nF across the laser diode in order to protect the laser diode against destruction due to ESD or buildSync DC-Monitor
R3 10k 13 MO 4 MI
C3 100nF 12 VCC
C4 100F
OUTPUT 14 Q PRF
DRIVER DIVIDER 16:1 NQ 1
LD
AMD 1
15
NQ NPRF 4 2 1:1 iC-VJ 1:3 iC-VJZ REFERENCE POWER ON TH.- SHUTDOWN 7 MONITOR
MD
C5 5nF
KLD
2
R5 12
OSCILLATOR 3 5 6 GND 3
R 5 R1 800
RC 6
ISET 11 RSET
iC-VJ/VJZ
CI 9 C2 470nF
AGND 7
C1 100pF
Figure 7: Operation of a laser diode via cable
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 9/10 EVALUATION BOARD For the devices iC-VJ/VJZ a Demo Board is available for test purposes. The following figures show the
ALD
C5 2nF J1 C4 100uF
schematic diagram and the component side of the test PCB.
VCC
MD
LD
AMD KLD GND MI
R5 12
1
AMD KLD
2
NPRF
15
NPRF
3
GND
14 PRF 13
PRF MO
4 MI C3 100nF 5 R3 10k R1 680 R
OSC REF
MO VCC 12 RMOD 10k (15k)
6
RC
ISET
11
IMOD
AGND
7
AGND CI 9 C2 470nF RSET 10k (15k) C6 100nF
iC-VJ/ VJZ
C1 82pF
Figure 8: Schematic diagram of the Demo Board
Figure 9: Demo Board (components side)
This specification is for a newly developed product. iC-Haus therefore reserves the right to change or update, without notice, any information contained herein, design and specification; and to discontinue or limit production or distribution of any product versions. Please contact iC-Haus to ascertain the current data. Copying - even as an excerpt - is only permitted with iC-Haus approval in writing and precise reference to source. iC-Haus does not warrant the accuracy, completeness or timeliness of the specification on this site and does not assume liability for any errors or omissions in the materials. The data specified is intended solely for the purpose of product description. No representations or warranties, either express or implied, of merchantability, fitness for a particular purpose or of any other nature are made hereunder with respect to information/specification or the products to which information refers and no guarantee with respect to compliance to the intended use is given. In particular, this also applies to the stated possible applications or areas of applications of the product. iC-Haus conveys no patent, copyright, mask work right or other trade mark right to this product. iC-Haus assumes no liability for any patent and/or other trade mark rights of a third party resulting from processing or handling of the product and/or any other use of the product.
iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 10/10 ORDERING INFORMATION
Type iC-VJ Demo Board iC-VJZ Demo Board
Package SO16N
Order Designation iC-VJ SO16N iC-VJ EVAL VJD iC-VJZ SO16N iC-VJZ EVAL VJD
SO16N
For information about prices, terms of delivery, other packaging options etc. please contact: iC-Haus GmbH Am Kuemmerling 18 D-55294 Bodenheim GERMANY Tel.: +49 (61 35) 92 92-0 Fax: +49 (61 35) 92 92-192 Web: http://www.ichaus.com E-Mail: sales@ichaus.com

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